advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 60v lower on-resistance r ds(on) 3.5m fast switching characteristic i d 80a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice total power dissipation 1.92 AP9992AGI-HF halogen-free product parameter rating drain-source voltage 60 gate-source voltage + 20 continuous drain current, v gs @ 10v 80 operating junction temperature range -55 to 150 continuous drain current, v gs @ 10v 50 pulsed drain current 1 300 storage temperature range total power dissipation 41.6 -55 to 150 201303201 thermal data parameter 1 g d s a p9992a series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications the to-220cfm package is widely preferred for all commercial- industrial through hole applications. the mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. g d s to-220cfm(i)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 3.5 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =40a - 80 - s i dss drain-source leakage current v ds =48v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =40a - 92 147 nc q gs gate-source charge v ds =48v - 20 - nc q gd gate-drain ("miller") charge v gs =10v - 39 - nc t d(on) turn-on delay time v ds =30v - 23 - ns t r rise time i d =40a - 82 - ns t d(off) turn-off delay time r g =3.3 -47- ns t f fall time v gs =10v - 83 - ns c iss input capacitance v gs =0v - 5500 8800 pf c oss output capacitance v ds =25v - 870 - pf c rss reverse transfer capacitance f=1.0mhz - 350 - pf r g gate resistance f=1.0mhz - 2 4 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.3 v t rr reverse recovery time i s =10a, v gs =0 v , - 60 - ns q rr reverse recovery charge di/dt=100a/s - 120 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP9992AGI-HF
a p9992agi-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 024681012 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 8.0v 7.0v 6.0v v g =5.0v 0 50 100 150 200 250 300 0 4 8 12 16 20 24 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 6.0v v g = 5.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d =250ua i d =1ma
ap9992agi-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. case temperature 4 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 12 0 40 80 120 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =40a v ds =48v 0 2000 4000 6000 8000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss operation in this area limited by r ds(on) 0 40 80 120 160 200 0246810 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 20 40 60 80 100 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) t j =-40 o c
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